Furthermore, due in part to scan flyback corrections, typical raster scan methods result in an uneven distribution of dose across the scanned area. However, two practical difficulties inherent to STEM imaging are: radiation damage imparted by the electron beam, which can potentially damage or otherwise modify the specimen and slow-scan image acquisition, which limits the ability to capture dynamic changes at high temporal resolution. Scanning transmission electron microscopy (STEM) has emerged as one of the foremost techniques to analyze materials at atomic resolution. In this chapter, we introduce the relevant state-of-the-art approaches regarding the lattice pattern analysis. Quantification of these spatial features allows material scientists to map material performance as a function of the features. In fact, the field of crystallographic research at atomic length scales is meant to locate individual atoms, and identify symmetries, dislocations, and defects in atom’s locations. Lattice pattern analysis plays an important role in material property characterization. Naturally, lattice pattern analysis refers to the study of symmetric arrangement of atoms and their deviation from the symmetry. A lattice, a term in geometry, describes here for material science purpose the symmetric arrangement of atoms in crystals. 5 presents the location and dispersion analysis of nanomaterials, whereas this chapter is dedicated to the lattice pattern analysis. Beyond morphology, studies on the spatial positioning and arrangements of smaller scale elements within bulk materials are of great interest to material scientists, because analysis of such arrangements could yield insights concerning the functionalities of materials.
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